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- Article name
- OPTIMIZATION OF SHF SELF-ALIGNED TRANSISTOR STRUCTURES BASED ON PURE SILICON AND OF L0W-NOISE WIDEBAND AMPLIFIER FOR RADIO FREQUENCY ICS WITH MEMS COMPONENTS. Рart 2
- Authors
- Verner V. D., , tc@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Saurov A. N., , tc@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Metelkov P. V., , pavel_metelkov@mail.ru, National Research University of Electronic Technology, Moscow, Russia
Lukanov N. M., , N. Loukanov@tcen.ru, SMC "Technological Center" of MIET, Moscow, Russia
- Keywords
- low-noise wideband amplifier (LNA) / pure silicon / radio frequency ICs with 5.2 GHz / SHF self-aligned transistor structure (SSATS) / optimization of parameters
- Year
- 2011 Issue 2 Pages 20 - 27
- Code EDN
- Code DOI
- Abstract
- A monolithic SHF low-noise wideband amplifier (LNA) for radio frequency ICs with 5.2 GHz on pure silicon was designed, using bipolar self-aligned transistor structure (SSATS). The LNA exhibits a noise figure as low as 1.8 dB, the 18.2 dB power gain, an input compression point of minus 21 dBm and a current consumption only 13 мA at a supply power 3 V.
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