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- Article name
- OPTIMIZATION OF SHF SELF-ALIGNED TRANSISTOR STRUCTURES BASED ON PURE SILICON AND OF LOW-NOISE WIDEBAND AMPLIFIER FOR RADIO FREQUENCY ICs WITH MEMS COMPONENTS. Рart 3. (Part 1 - 2011. No. 1. P. 78-84; part 2 - 2011. No. 2. P. 20-27)
- Authors
- Verner V. D., , tc@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Saurov A. N., , tc@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Metelkov P. V., , pavel_metelkov@mail.ru, National Research University of Electronic Technology, Moscow, Russia
Lukanov N. M., , N. Loukanov@tcen.ru, SMC "Technological Center" of MIET, Moscow, Russia
- Keywords
- constructive and technological features / SHF self-aligned transistor structure (SSATS) / fully self-aligned transistor structure (SFSATS) / n(p)-channel FETs / pure silicon / radio frequency ICs with 5.2 GHz
- Year
- 2011 Issue 3 Pages 11 - 20
- Code EDN
- Code DOI
- Abstract
- The constructive and technological features of manufacturing a bipolar SHF self-aligned and fully self-aligned transistors structure together with n(p)-channel FETs on pure silicon were designed. These transistors structures are presented as a suitable for monolithic low-noise wideband amplifier (LNA) and radio frequency 5.2 GHz ICs.
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