To obtain access to full text of journal and articles you must register!
- Article name
- PROCESS OPTIMIZATION OF DEEP SILICON ETCHING FOR MEMS STRUCTURES
- Authors
- TIMOSHENKOV S. P., , spt@miee.ru, National Research University of Electronic Technology, Moscow, Russia
Vinogradov A. I., , plavec@list.ru, National Research University of Electronic Technology, Moscow, Russia
Zaryankin N. M., , n.zaryankin@mail.ru, National Research University of Electronic Technology, Moscow, Russia
- Keywords
- deep silicon etching / MEMS
- Year
- 2013 Issue 2 Pages 68 - 73
- Code EDN
- Code DOI
- Abstract
- The complex of investigations to improve the processes of precision deep etching of silicon for produce of MEMS elements is performed. Following aspects of deep silicon etching process are considered: surface roughness after etching, etching uniformity, selectivity of etching of silicon to photoresist and silicon dioxide. Considerable improvement of process characteristics is reached. The obtained results are used for manufacturing silicon accelerometers and gyroscopes.
- Text
- To obtain access to full text of journal and articles you must register!
- Buy
