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- Article name
- SENSITIVITY OF THE MAGNETOTRANSISTOR ON THE ION IMPLANTATION OF THE BASE SURFACE
- Authors
- Krasyukov A. Yu., , a_kras@rambler.ru, National Research University of Electronic Technology, Moscow, Russia
Cheremisinov A. A., , cheremisinovaa@gmail.com, National Research University of Electronic Technology, Moscow, Russia
Tikhonov R. D., , R.Tikhonov@tcen.ru, SMC"Technological Centre" MIET, Moscow, Russia
- Keywords
- bipolar magnetotransistor (BMT) / device-technological modeling / effect of a deviation / surface recombination
- Year
- 2013 Issue 2 Pages 45 - 50
- Code EDN
- Code DOI
- Abstract
- Comparison of results of device-technological modeling and experimental data is carried out and connection of relative sensitivity on current is established with impurity distribution in base of the two-collector lateral bipolar magnetotransistor (BMT). The magnetotransistor 3CBMTBW with a small speed of a surface recombination on interface of the silicon - dioxide of silicon and with extraction of the injected electrons remote from a surface рn-junction base - a well has high sensitivity on voltage of 11 V/T.
- Text
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