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- Article name
- pH-SENSITIVE ELEMENT BASED ON SILICON NANOSTRUCTURE
- Authors
- Kuznetsov Е. V., , kev@tcen.ru, SMC "Technological Centre" MIET, Moscow, Russia
Chuyko O. V., , O.Chuyko@tcen.ru, SMC "Technological Centre", MIET, Moscow, Russia
Kuznetsov A. E., , KEA@tcen.ru, SMC "Technological Centre", MIET, Moscow, Russia
Rybachek E. N., , REN@tcen.ru, SMC "Technological Centre", MIET, Moscow, Russia
Belostotskaya S. O., , S.Belostotskaya@tcen.ru, SMC "Technological Centre", MIET, Moscow, Russia
- Keywords
- ISFET / pH / silicon nanowire / sensitivity
- Year
- 2011 Issue 4 Pages 44 - 48
- Code EDN
- Code DOI
- Abstract
- Sensitive elements for pH-meters created on silicon nanostructures are researched. Experimental methods for detecting electrophysical parameters of ion-sensitive field-effect transistors (ISFET) are considered. It is shown, that sensitive element, which is made of "one-dimensional" silicon nanostructure have bigger pH-sensitivity as compared with "two-dimensional" structure.
- Text
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