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- Article name
- RESEARCH OF PROCESS OF SEDIMENTATION OF LAYERS DIOXIDE SILICON OXIDATION DICHLORSILANE AT THE LOWERED PRESSURE AND PROPERTIES OF THE RECEIVED LAYERS
- Authors
- Mansha N. M., , , ,
- Keywords
- process of sedimentation / dioxide silicon / a steam phase oxidation dichlorsilane / dichlorsilane / nitrous oxide / bimolecular reaction / research of layers dioxide silicon
- Year
- 2009 Issue 3 Pages 59 - 65
- Code EDN
- Code DOI
- Abstract
- There has been researched kinetics of deposition of silicon nitride layers by dichlorsilane ammonolysis at lowered pressure at deposition temperature (973-1123) K and at reactor pressure (10-130) Pa. On a basis bimolecular interaction reactions dichlorsilane with ammonia and ammonia experimental growth rate of a layer of nitride of silicon the constant of balance of the given reaction is calculated. Experimental values and settlement values of seeming energy of activation received by means of a balance constant practically coincide. There have been produced practical guidelines to silicon nitride layers guality.
- Text
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