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- Article name
- HIGH VOLTAGE LDMOS FET FOR POWER ELECTRONIC APPLICATION
- Authors
- Kouznetsov E. V., , , ,
Rybachek E. N., , , ,
Shemyakin A. V., , , ,
- Keywords
- lateral LDMOS-transistor / microwate transistor / power MOSFET / silicon technology / RF mode- ling RFIC
- Year
- 2009 Issue 3 Pages 55 - 58
- Code EDN
- Code DOI
- Abstract
- This paper presents a design and technology features of power LDMOS FET (Late-rally diffused metal-oxide-semi-conductor Field-effect Transistor). A number of technological and constructive decisions are proposed. With this we were able to build a technology tree for the series of power LDMOS FET simply integrated in typical 1.2 um CMOS silicon technology.
- Text
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