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- Article name
- RESEARCH OF SILICON NITRIDE LAYERS SYNTHESIS BY DICHLORSILANE AMMONOLYSIS AT LOWERED PRESSURE
- Authors
- Mansha N. M., , , ,
- Keywords
- sedimentation of layers / nitride silicon from a steam phase / ammonia / dichlorsilane / kinetics sedimentation / bimolecular reaction
- Year
- 2009 Issue 3 Pages 44 - 49
- Code EDN
- Code DOI
- Abstract
- There has been researched kinetics of deposition of silicon nitride layers by dichlorsilane ammonolysis at lowered pressure at deposition temperature 973-1123 K and at reactor pressure 10-130 Pa. On a basis bimolecular interaction reactions dichlorsilane with ammonia and ammonia experimental growth rate of a layer of nitride of silicon the constant of balance of the given reaction is calculated. Experimental values and settlement values of seeming energy of activation received by means of a balance constant practically coincide. There have been produced practical guidelines to silicon nitride layers quality.
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